Growth of Ga-doped ZnO nanowires by two-step vapor phase method
SCIE
SCOPUS
- Title
- Growth of Ga-doped ZnO nanowires by two-step vapor phase method
- Authors
- Xu, C; Kim, M; Chun, J; Kim, D
- Date Issued
- 2005-03-28
- Publisher
- AMER INST PHYSICS
- Abstract
- A two-step route is presented to dope Ga into ZnO nanowires and also fabricate heterostructures of Ga-doped ZnO nanowires on ZnO. The content of Ga in ZnO nanowires is about 7 at. % from energy-dispersive x-ray analysis. The single crystal Ga doped ZnO nanowires with the diameter of 40 nm and the length of 300-500 nm are well aligned on the ZnO bulk. The growth direction is along [001]. Raman scattering analysis shows that the doping of Ga into ZnO nanowires depresses Raman E-1L mode of ZnO, manifesting that Ga sites in ZnO are Zn sites (Ga-Zn). The formation mechanism of Zn1-xGaxO nanowires/ZnO heterostructures is proposed. (C) 2005 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9501
- DOI
- 10.1063/1.1888035
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 86, no. 13, page. 133107 - 133107, 2005-03-28
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