DC Field | Value | Language |
---|---|---|
dc.contributor.author | LEE, JAESEONG | - |
dc.contributor.author | LEE, DAESU | - |
dc.contributor.author | Cho, S. J. | - |
dc.contributor.author | Seo, J.-H. | - |
dc.contributor.author | Liu, D. | - |
dc.contributor.author | Eom, C.-B. | - |
dc.contributor.author | Ma, Z. | - |
dc.date.accessioned | 2019-03-07T01:20:22Z | - |
dc.date.available | 2019-03-07T01:20:22Z | - |
dc.date.created | 2019-02-28 | - |
dc.date.issued | 2017-09 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/95010 | - |
dc.description.abstract | Vanadium dioxide (VO2) is a correlated material exhibiting a sharp insulator-to-metal phase transition (IMT) caused by temperature change and/or bias voltage. We report on the demonstration of electrically triggered radio-frequency (RF) switches based on epitaxial VO2 thin films. The highly epitaxial VO2 and SnO2 template layer was grown on a (001) TiO2 substrate by pulsed laser deposition (PLD). A resistance change of the VO2 thin films of four orders of magnitude was achieved with a relatively low threshold voltage, as low as 13V, for an IMT phase transition. VO2 RF switches also showed high-frequency responses of insertion losses of -3 dB at the on-state and return losses of -4.3 dB at the off-state over 27GHz. Furthermore, an intrinsic cutoff frequency of 17.4 THz was estimated for the RF switches. The study on electrical IMT dynamics revealed a phase transition time of 840 ns. (C) 2017 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.relation.isPartOf | Applied Physics Express | - |
dc.title | Epitaxial VO2 thin-film-based radio-frequency switches with electrical activation | - |
dc.type | Article | - |
dc.identifier.doi | 10.7567/APEX.10.091101 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Applied Physics Express, v.10, no.9 | - |
dc.identifier.wosid | 000407277000001 | - |
dc.citation.number | 9 | - |
dc.citation.title | Applied Physics Express | - |
dc.citation.volume | 10 | - |
dc.contributor.affiliatedAuthor | LEE, DAESU | - |
dc.identifier.scopusid | 2-s2.0-85029145987 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | WAVE-GUIDE DISCONTINUITIES | - |
dc.subject.keywordPlus | METAL-INSULATOR-TRANSITION | - |
dc.subject.keywordPlus | MEMS RF SWITCH | - |
dc.subject.keywordPlus | VANADIUM DIOXIDE | - |
dc.subject.keywordPlus | PHASE-TRANSITION | - |
dc.subject.keywordPlus | MOTT TRANSITION | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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