DC Field | Value | Language |
---|---|---|
dc.contributor.author | LEE, JAESEONG | - |
dc.contributor.author | LEE, DAESU | - |
dc.contributor.author | Cho, S. J. | - |
dc.contributor.author | Seo, J.-H. | - |
dc.contributor.author | Liu, D. | - |
dc.contributor.author | Eom, C.-B. | - |
dc.contributor.author | Ma, Z. | - |
dc.date.accessioned | 2019-03-07T01:20:26Z | - |
dc.date.available | 2019-03-07T01:20:26Z | - |
dc.date.created | 2019-02-28 | - |
dc.date.issued | 2017-08-07 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/95011 | - |
dc.description.abstract | In this paper, we report on the demonstration of thermally triggered "normally ON" radio-frequency (RF) switches based on epitaxial vanadium dioxide (VO2) thin films with a SnO2 template on (001) TiO2 substrates. Fast insulator-to-metal phase transition of the epitaxial VO2 at a relatively low temperature allowed RF switches made of the VO2 to exhibit sharp changes in the RF insertion loss during cooling and heating at 60 degrees C and 66 degrees C, respectively. The change of RF insertion loss due to phase transition is greater than 15 dB. The VO2 RF switches also completed the transition of S-21 within less than 3 degrees C and showed a low-loss operation frequency of up to 24.2 GHz with a low insertion loss of -1.36 dB and isolation of 17.56 dB at 12.03 GHz, respectively. The demonstration suggests that epitaxial VO2-based RF switches can be used in switching elements up to Ku-band RF circuits. Published by AIP Publishing. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.title | Epitaxial VO2 thin film-based radio-frequency switches with thermal activation | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.4998452 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.111, no.6 | - |
dc.identifier.wosid | 000407696500043 | - |
dc.citation.number | 6 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 111 | - |
dc.contributor.affiliatedAuthor | LEE, DAESU | - |
dc.identifier.scopusid | 2-s2.0-85027257600 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | VANADIUM DIOXIDE | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordPlus | WAVE-GUIDE DISCONTINUITIES | - |
dc.subject.keywordPlus | MEMS RF SWITCH | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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