Enhancement of hole injection using O-2 plasma-treated Ag anode for top-emitting organic light-emitting diodes
SCIE
SCOPUS
- Title
- Enhancement of hole injection using O-2 plasma-treated Ag anode for top-emitting organic light-emitting diodes
- Authors
- Choi, HW; Kim, SY; Kim, KB; Tak, YH; Lee, JL
- Date Issued
- 2005-01-03
- Publisher
- AMER INST PHYSICS
- Abstract
- We report the enhancement of hole injection using AgOx layer between Ag anode and 4,4(')-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl in top-emitting organic light-emitting diode (OLED). The turn-on voltage of OLEDs decreased from 17 to 7 V as Ag changed to AgOx by the surface treatment using O-2 plasma. Synchrotron radiation photoelectron spectroscopy results showed that the work function increased about 0.4 eV by the O-2 plasma treatment. This led to the decrease of the energy barrier for hole injection, reducing the turn-on voltage of OLEDs. (C) 2005 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9504
- DOI
- 10.1063/1.1846149
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 86, no. 1, 2005-01-03
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