DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xi, YA | - |
dc.contributor.author | Chen, KX | - |
dc.contributor.author | Mont, F | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Wetzel, C | - |
dc.contributor.author | Schubert, EF | - |
dc.contributor.author | Liu, W | - |
dc.contributor.author | Li, X | - |
dc.contributor.author | Smart, JA | - |
dc.date.accessioned | 2015-06-25T01:12:47Z | - |
dc.date.available | 2015-06-25T01:12:47Z | - |
dc.date.created | 2009-09-07 | - |
dc.date.issued | 2006-09-04 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000018804 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9506 | - |
dc.description.abstract | Very high quality AlN epitaxially grown on (0001) sapphire by metal-organic vapor phase epitaxy is investigated by atomic force microscopy, x-ray diffraction, and photospectrometry. A clear and continuously linear step-flow pattern with sawtooth shaped terrace edges is observed in atomic force microscopic images. Triple-axis x-ray rocking curves show a full width at half maximum of 11.5 and 14.5 arc sec for the (002) and (004) reflections, respectively. KOH etching reveals an etch-pit density of 2x10(7) cm(-2), as deduced from atomic force microscopy measurements. The optical transmission spectrum shows a sharp absorption edge with a band gap energy of 6.10 eV. (c) 2006 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Very high quality AlN grown on (0001) sapphire by metal-organic vapor phase epitaxy | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.2345256 | - |
dc.author.google | Xi, YA | en_US |
dc.author.google | Chen, KX | en_US |
dc.author.google | Smart, JA | en_US |
dc.author.google | Li, X | en_US |
dc.author.google | Liu, W | en_US |
dc.author.google | Schubert, EF | en_US |
dc.author.google | Wetzel, C | en_US |
dc.author.google | Kim, JK | en_US |
dc.author.google | Mont, F | en_US |
dc.relation.volume | 89 | en_US |
dc.relation.issue | 10 | en_US |
dc.contributor.id | 10100864 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.89, no.10 | - |
dc.identifier.wosid | 000240384000078 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 10 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 89 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-33748493611 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 32 | - |
dc.description.scptc | 39 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordPlus | NM | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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