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Cited 61 time in webofscience Cited 72 time in scopus
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dc.contributor.authorLee, TW-
dc.contributor.authorKim, MG-
dc.contributor.authorKim, SY-
dc.contributor.authorPark, SH-
dc.contributor.authorKwon, O-
dc.contributor.authorNoh, T-
dc.contributor.authorOh, TS-
dc.date.accessioned2015-06-25T01:13:06Z-
dc.date.available2015-06-25T01:13:06Z-
dc.date.created2009-08-26-
dc.date.issued2006-09-18-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000016734en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9511-
dc.description.abstractThe authors report the effect of thermal treatment of hole-transporting interlayers between a polymeric hole injection layer and an emitting layer (EML) on the luminous efficiency and the lifetime performance in blue polymer light-emitting diodes. As the thermal annealing temperature of the interlayer increased, the hole mobility of the interlayer tended to decrease, which results in reducing the hole current injected into the EML in the devices. Hence, the device luminous efficiency decreased due to lower electron-hole balance. Nevertheless, the device lifetime increased, which can be attributed to the formation of the thicker interlayer and the better defined interlayer/EML interface.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleHole-transporting interlayers for improving the device lifetime in the polymer light-emitting diodes-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.2345239-
dc.author.googleKim, MGen_US
dc.author.googleKim, SYen_US
dc.author.googlePark, SHen_US
dc.author.googleOh, TSen_US
dc.author.googleNoh, Ten_US
dc.author.googleLee, TWen_US
dc.author.googleKwon, Oen_US
dc.relation.volume89en_US
dc.relation.issue12en_US
dc.contributor.id10154218en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.89, no.12-
dc.identifier.wosid000240680300132-
dc.date.tcdate2019-01-01-
dc.citation.number12-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume89-
dc.contributor.affiliatedAuthorLee, TW-
dc.identifier.scopusid2-s2.0-33748970892-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc54-
dc.description.scptc56*
dc.date.scptcdate2018-06-152*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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이태우LEE, TAE WOO
Dept of Materials Science & Enginrg
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