DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, YJ | - |
dc.contributor.author | Lee, CH | - |
dc.contributor.author | Hong, YJ | - |
dc.contributor.author | Yi, GC | - |
dc.contributor.author | Kim, SS | - |
dc.contributor.author | Cheong, H | - |
dc.date.accessioned | 2015-06-25T01:13:37Z | - |
dc.date.available | 2015-06-25T01:13:37Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2006-10-16 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000006314 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9519 | - |
dc.description.abstract | The use of a wet chemical method to selectively grow ZnO microrod and nanorod arrays on Si substrates is described. To control the size and position of the ZnO microrods and nanorods, polymethylmethacrylate (PMMA) submicron patterns were prepared on the Si substrates with an intermediate ZnO layer using e-beam lithography. Selective growth of the ZnO structures was achieved by the absence of ZnO nucleation sites on the PMMA mask, resulting in position-controlled growth of ZnO structures only on patterned holes where the ZnO layer was exposed. In addition, the diameters of the ZnO microrods were determined by the patterned hole size, and the diameters as small as 250 nm were obtained when a hole diameter of 250 nm was employed. The structural and optical characteristics of the ZnO microrods were further investigated using x-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopy. (c) 2006 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Controlled selective growth of ZnO nanorod and microrod arrays on Si substrates by a wet chemical method | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.2364162 | - |
dc.author.google | Kim, YJ | en_US |
dc.author.google | Lee, CH | en_US |
dc.author.google | Cheong, H | en_US |
dc.author.google | Kim, SS | en_US |
dc.author.google | Yi, GC | en_US |
dc.author.google | Hong, YJ | en_US |
dc.relation.volume | 89 | en_US |
dc.relation.issue | 16 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.89, no.16 | - |
dc.identifier.wosid | 000241405200107 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 16 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 89 | - |
dc.contributor.affiliatedAuthor | Yi, GC | - |
dc.identifier.scopusid | 2-s2.0-33750162811 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 107 | - |
dc.description.scptc | 109 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | PHASE EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | CRYSTAL | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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