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Cited 134 time in webofscience Cited 127 time in scopus
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dc.contributor.authorKim, YJ-
dc.contributor.authorLee, CH-
dc.contributor.authorHong, YJ-
dc.contributor.authorYi, GC-
dc.contributor.authorKim, SS-
dc.contributor.authorCheong, H-
dc.date.accessioned2015-06-25T01:13:37Z-
dc.date.available2015-06-25T01:13:37Z-
dc.date.created2009-02-28-
dc.date.issued2006-10-16-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000006314en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9519-
dc.description.abstractThe use of a wet chemical method to selectively grow ZnO microrod and nanorod arrays on Si substrates is described. To control the size and position of the ZnO microrods and nanorods, polymethylmethacrylate (PMMA) submicron patterns were prepared on the Si substrates with an intermediate ZnO layer using e-beam lithography. Selective growth of the ZnO structures was achieved by the absence of ZnO nucleation sites on the PMMA mask, resulting in position-controlled growth of ZnO structures only on patterned holes where the ZnO layer was exposed. In addition, the diameters of the ZnO microrods were determined by the patterned hole size, and the diameters as small as 250 nm were obtained when a hole diameter of 250 nm was employed. The structural and optical characteristics of the ZnO microrods were further investigated using x-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopy. (c) 2006 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleControlled selective growth of ZnO nanorod and microrod arrays on Si substrates by a wet chemical method-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.2364162-
dc.author.googleKim, YJen_US
dc.author.googleLee, CHen_US
dc.author.googleCheong, Hen_US
dc.author.googleKim, SSen_US
dc.author.googleYi, GCen_US
dc.author.googleHong, YJen_US
dc.relation.volume89en_US
dc.relation.issue16en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.89, no.16-
dc.identifier.wosid000241405200107-
dc.date.tcdate2019-01-01-
dc.citation.number16-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume89-
dc.contributor.affiliatedAuthorYi, GC-
dc.identifier.scopusid2-s2.0-33750162811-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc107-
dc.description.scptc109*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusPHASE EPITAXIAL-GROWTH-
dc.subject.keywordPlusNANOWIRES-
dc.subject.keywordPlusCRYSTAL-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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이규철YI, GYU CHUL
Dept of Materials Science & Enginrg
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