Low-voltage organic transistors on a polymer substrate with an aluminum foil gate fabricated by a laminating and electropolishing process

Abstract

The authors report flexible and low-voltage pentacene organic field-effect transistors (OFETs) constructed with an aluminum foil gate electrode, which was fabricated by the simple and low-cost roll-to-roll lamination process. Electropolishing the surface of laminated aluminum foil and spin coating it with an additional thin polymer film resulted in a gate dielectric surface with a root-mean-square roughness of about 0.85 nm. These pentacene OFETs with a poly(alpha-methylstyrene)/anodized Al2O3 dual-layered gate dielectric exhibit a mobility of 0.52 cm(2)/V s, an on-off ratio of 10(5), a subthreshold swing of 317 mV/decade, and little hysteresis when operating at -5 V. (c) 2006 American Institute of Physics.