Position-selective solution phase growth of fullerene crystals

Abstract

An efficient method for the formation of hexagonal disk shape C-60 crystals at desired positions on a solid substrate has been achieved. The detailed growth behavior was studied through in-situ observation and series of control experiments. Our position selective growth technique enabled a fabrication of bottom electrode type C-60 single crystal devices which exhibited n-type field-effect transistor behavior and photo response. Moreover, the C-60 single crystal devices were further exploited to study alkali metal doped C-60 crystal and its superconductivity. (c) 2019 Elsevier Ltd. All rights reserved.