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Cited 4 time in webofscience Cited 3 time in scopus
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dc.contributor.author이상민-
dc.contributor.author송정환-
dc.contributor.author임석재-
dc.contributor.authorChekol, Solomon Amsalu-
dc.contributor.authorHwang, Hyunsang-
dc.date.accessioned2019-04-07T14:59:05Z-
dc.date.available2019-04-07T14:59:05Z-
dc.date.created2019-02-13-
dc.date.issued2019-03-
dc.identifier.issn0038-1101-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/95279-
dc.description.abstractIn this work, we explore the electrical properties and data retention of Te-based conducive-bridge random-access memory (CBRAM) of ZrxTe1-x/Al2O3/Pt cells. The virgin resistance and forming voltage are decreased with increasing Zr composition (0.5 <= x <= 0.7) and decreasing electrolyte thickness. The resistance of the conducive filament (CF) formed in the Te-CBRAM shows semiconducting behavior that is decreased with increasing temperature, whereas a Cu-based CBRAM shows metallic behavior. Furthermore, the conductance change of Te-based CBRAM, during the filament dissolution step, occurs with lower conductance units than those of Cu/Ag-based CBRAM. The most differentiable characteristics of both devices are the data retention. Te-based CBRAM shows better data stability at high temperature (150 degrees C) than Cu-based device. Accelerated tests (250, 270, and 300 degrees C) were performed to understand the data retention of the Te-CBRAM, yielding excellent retention characteristics (10 years at 177 degrees C) despite its relatively low activation energy (E-a, 1.07 eV) than Cu/Ag- based devices. We believe that the excellent retention properties of Te-based devices are more influenced by the wide effective CF size than by E-a.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.relation.isPartOfSOLID-STATE ELECTRONICS-
dc.titleExcellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory-
dc.typeArticle-
dc.identifier.doi10.1016/j.sse.2018.12.008-
dc.type.rimsART-
dc.identifier.bibliographicCitationSOLID-STATE ELECTRONICS, v.153, pp.8 - 11-
dc.identifier.wosid000456333800002-
dc.citation.endPage11-
dc.citation.startPage8-
dc.citation.titleSOLID-STATE ELECTRONICS-
dc.citation.volume153-
dc.contributor.affiliatedAuthor이상민-
dc.contributor.affiliatedAuthor송정환-
dc.contributor.affiliatedAuthor임석재-
dc.contributor.affiliatedAuthorChekol, Solomon Amsalu-
dc.contributor.affiliatedAuthorHwang, Hyunsang-
dc.identifier.scopusid2-s2.0-85058367441-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeArticle-
dc.subject.keywordPlusTELLURIUM-
dc.subject.keywordPlusMECHANISM-
dc.subject.keywordPlusCBRAM-
dc.subject.keywordAuthorConductive-bridge RAM (CBRAM)-
dc.subject.keywordAuthorRetention-
dc.subject.keywordAuthorActivation energy-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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