DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이상민 | - |
dc.contributor.author | 송정환 | - |
dc.contributor.author | 임석재 | - |
dc.contributor.author | Chekol, Solomon Amsalu | - |
dc.contributor.author | Hwang, Hyunsang | - |
dc.date.accessioned | 2019-04-07T14:59:05Z | - |
dc.date.available | 2019-04-07T14:59:05Z | - |
dc.date.created | 2019-02-13 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/95279 | - |
dc.description.abstract | In this work, we explore the electrical properties and data retention of Te-based conducive-bridge random-access memory (CBRAM) of ZrxTe1-x/Al2O3/Pt cells. The virgin resistance and forming voltage are decreased with increasing Zr composition (0.5 <= x <= 0.7) and decreasing electrolyte thickness. The resistance of the conducive filament (CF) formed in the Te-CBRAM shows semiconducting behavior that is decreased with increasing temperature, whereas a Cu-based CBRAM shows metallic behavior. Furthermore, the conductance change of Te-based CBRAM, during the filament dissolution step, occurs with lower conductance units than those of Cu/Ag-based CBRAM. The most differentiable characteristics of both devices are the data retention. Te-based CBRAM shows better data stability at high temperature (150 degrees C) than Cu-based device. Accelerated tests (250, 270, and 300 degrees C) were performed to understand the data retention of the Te-CBRAM, yielding excellent retention characteristics (10 years at 177 degrees C) despite its relatively low activation energy (E-a, 1.07 eV) than Cu/Ag- based devices. We believe that the excellent retention properties of Te-based devices are more influenced by the wide effective CF size than by E-a. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.title | Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.sse.2018.12.008 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.153, pp.8 - 11 | - |
dc.identifier.wosid | 000456333800002 | - |
dc.citation.endPage | 11 | - |
dc.citation.startPage | 8 | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 153 | - |
dc.contributor.affiliatedAuthor | 이상민 | - |
dc.contributor.affiliatedAuthor | 송정환 | - |
dc.contributor.affiliatedAuthor | 임석재 | - |
dc.contributor.affiliatedAuthor | Chekol, Solomon Amsalu | - |
dc.contributor.affiliatedAuthor | Hwang, Hyunsang | - |
dc.identifier.scopusid | 2-s2.0-85058367441 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TELLURIUM | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | CBRAM | - |
dc.subject.keywordAuthor | Conductive-bridge RAM (CBRAM) | - |
dc.subject.keywordAuthor | Retention | - |
dc.subject.keywordAuthor | Activation energy | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
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