Open Access System for Information Sharing

Login Library

 

Article
Cited 17 time in webofscience Cited 17 time in scopus
Metadata Downloads
Full metadata record
Files in This Item:
DC FieldValueLanguage
dc.contributor.authorShon, Y-
dc.contributor.authorLee, S-
dc.contributor.authorJeon, HC-
dc.contributor.authorPark, YS-
dc.contributor.authorKim, DY-
dc.contributor.authorKang, TW-
dc.contributor.authorKim, JS-
dc.contributor.authorKim, EK-
dc.contributor.authorFu, DJ-
dc.contributor.authorFan, XJ-
dc.contributor.authorPark, YJ-
dc.contributor.authorBaik, JM-
dc.contributor.authorLee, JL-
dc.date.accessioned2015-06-25T01:14:16Z-
dc.date.available2015-06-25T01:14:16Z-
dc.date.created2009-02-28-
dc.date.issued2006-08-21-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000006179en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9529-
dc.description.abstractThe systematic enhancement of ferromagnetic hysteresis loops for GaN implanted with high doses of Fe (5 -> 10 at. %) takes place with an increase in the annealing temperature from 700 to 850 degrees C. The trends of magnetic properties coincide with the results of the increased full width at half maximum of triple axis diffraction for GaN (0002), including the appearance of GaFeN, the enhanced Fe-related photoluminescence transitions, and the systematic increase in sizes of symmetric spin ferromagnetic domains GaFeN in atomic force microscopy and magnetic force microscopy. (c) 2006 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleOrigin of clear ferromagnetism for p-type GaN implanted with Fe+ (5 and 10 at. %)-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.2338000-
dc.author.googleShon, Yen_US
dc.author.googleLee, Sen_US
dc.author.googleLee, JLen_US
dc.author.googleBaik, JMen_US
dc.author.googlePark, YJen_US
dc.author.googleFan, XJen_US
dc.author.googleFu, DJen_US
dc.author.googleKim, EKen_US
dc.author.googleKim, JSen_US
dc.author.googleKang, TWen_US
dc.author.googleKim, DYen_US
dc.author.googlePark, YSen_US
dc.author.googleJeon, HCen_US
dc.relation.volume89en_US
dc.relation.issue8en_US
dc.contributor.id10105416en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.89, no.8-
dc.identifier.wosid000240035400061-
dc.date.tcdate2019-01-01-
dc.citation.number8-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume89-
dc.contributor.affiliatedAuthorLee, JL-
dc.identifier.scopusid2-s2.0-33747851037-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc16-
dc.description.scptc15*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusROOM-TEMPERATURE FERROMAGNETISM-
dc.subject.keywordPlusMAGNETIC SEMICONDUCTORS-
dc.subject.keywordPlusMN-
dc.subject.keywordPlusIONS-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
Read more

Views & Downloads

Browse