DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, K | - |
dc.contributor.author | Yang, CW | - |
dc.contributor.author | Yang, SY | - |
dc.contributor.author | Jeon, HY | - |
dc.contributor.author | Park, CE | - |
dc.date.accessioned | 2015-06-25T01:15:38Z | - |
dc.date.available | 2015-06-25T01:15:38Z | - |
dc.date.created | 2009-03-17 | - |
dc.date.issued | 2006-02-13 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000005697 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9550 | - |
dc.description.abstract | The effects of the surface roughness of the polymer gate dielectrics on pentacene field-effect transistors were investigated. Using a poly(methylmethacrylate)/anodized Al2O3 dual-layer gate dielectric, the root-mean-square roughness of the gate dielectrics varied from 0.45 to 1.51 nm, independently of other gate dielectric properties such as the capacitance and surface energy. This range of root-mean-square roughnesses had little effect on the carrier mobility. X-ray diffraction analyses further revealed that the roughness of poly(methylmethacrylate) neither decreased the degree of crystallinity nor distorted the crystalline structure of pentacene. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Effects of polymer gate dielectrics roughness on pentacene field-effect transistors | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.2176858 | - |
dc.author.google | Shin, K | en_US |
dc.author.google | Yang, CW | en_US |
dc.author.google | Park, CE | en_US |
dc.author.google | Jeon, HY | en_US |
dc.author.google | Yang, SY | en_US |
dc.relation.volume | 88 | en_US |
dc.relation.issue | 7 | en_US |
dc.contributor.id | 10104044 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.88, no.7 | - |
dc.identifier.wosid | 000235393700055 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 7 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 88 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-32944477050 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 49 | - |
dc.description.scptc | 50 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRONIC TRANSPORT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.