Open Access System for Information Sharing

Login Library

 

Article
Cited 135 time in webofscience Cited 137 time in scopus
Metadata Downloads
Full metadata record
Files in This Item:
DC FieldValueLanguage
dc.contributor.authorJang, Y-
dc.contributor.authorKim, DH-
dc.contributor.authorPark, YD-
dc.contributor.authorCho, JH-
dc.contributor.authorHwang, M-
dc.contributor.authorCho, KW-
dc.date.accessioned2015-06-25T01:15:42Z-
dc.date.available2015-06-25T01:15:42Z-
dc.date.created2009-08-25-
dc.date.issued2006-02-13-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000005696en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9551-
dc.description.abstractA key issue in research into organic thin-film transistors (OTFTs) is low-voltage operation. In this study, we fabricated a pentacene thin-film transistor with an ultrathin layer of polyvinyl alcohol (9 nm) as a gate insulator, and obtained a device with excellent electrical characteristics at low operating voltages (below 2 V). This device was found to have a field-effect mobility of 1.1 cm(2)/V s, a threshold voltage of -0.98 V, an exceptionally low subthreshold slope of 180 mV/decade, and an on/off current ratio of 10(6). This favorable combination of properties means that such OTFTs can be operated successfully at voltages below 2 V.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleLow-voltage and high-field-effect mobility organic transistors with a polymer insulator-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1063/1.2173633-
dc.author.googleJang, Yen_US
dc.author.googleKim, DHen_US
dc.author.googleCho, KWen_US
dc.author.googleHwang, Men_US
dc.author.googleCho, JHen_US
dc.author.googlePark, YDen_US
dc.relation.volume88en_US
dc.relation.issue7en_US
dc.relation.startpage72101en_US
dc.relation.lastpage72101en_US
dc.contributor.id10077904en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.88, no.7, pp.72101 - 72101-
dc.identifier.wosid000235393700047-
dc.date.tcdate2019-01-01-
dc.citation.endPage72101-
dc.citation.number7-
dc.citation.startPage72101-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume88-
dc.contributor.affiliatedAuthorCho, KW-
dc.identifier.scopusid2-s2.0-32944458554-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc104-
dc.description.scptc109*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusATOMIC LAYER DEPOSITION-
dc.subject.keywordPlusGATE INSULATORS-
dc.subject.keywordPlusMONOLAYER-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

조길원CHO, KIL WON
Dept. of Chemical Enginrg
Read more

Views & Downloads

Browse