DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Y | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Park, YD | - |
dc.contributor.author | Cho, JH | - |
dc.contributor.author | Hwang, M | - |
dc.contributor.author | Cho, KW | - |
dc.date.accessioned | 2015-06-25T01:15:42Z | - |
dc.date.available | 2015-06-25T01:15:42Z | - |
dc.date.created | 2009-08-25 | - |
dc.date.issued | 2006-02-13 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000005696 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9551 | - |
dc.description.abstract | A key issue in research into organic thin-film transistors (OTFTs) is low-voltage operation. In this study, we fabricated a pentacene thin-film transistor with an ultrathin layer of polyvinyl alcohol (9 nm) as a gate insulator, and obtained a device with excellent electrical characteristics at low operating voltages (below 2 V). This device was found to have a field-effect mobility of 1.1 cm(2)/V s, a threshold voltage of -0.98 V, an exceptionally low subthreshold slope of 180 mV/decade, and an on/off current ratio of 10(6). This favorable combination of properties means that such OTFTs can be operated successfully at voltages below 2 V. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Low-voltage and high-field-effect mobility organic transistors with a polymer insulator | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.2173633 | - |
dc.author.google | Jang, Y | en_US |
dc.author.google | Kim, DH | en_US |
dc.author.google | Cho, KW | en_US |
dc.author.google | Hwang, M | en_US |
dc.author.google | Cho, JH | en_US |
dc.author.google | Park, YD | en_US |
dc.relation.volume | 88 | en_US |
dc.relation.issue | 7 | en_US |
dc.relation.startpage | 72101 | en_US |
dc.relation.lastpage | 72101 | en_US |
dc.contributor.id | 10077904 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.88, no.7, pp.72101 - 72101 | - |
dc.identifier.wosid | 000235393700047 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 72101 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 72101 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 88 | - |
dc.contributor.affiliatedAuthor | Cho, KW | - |
dc.identifier.scopusid | 2-s2.0-32944458554 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 104 | - |
dc.description.scptc | 109 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | GATE INSULATORS | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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