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Air-Stable n-Channel Organic Thin-Film Transistors with High Field-Effect Mobility Based on N,N'-bis(heptafluorobutyl)-3,4:9,10-Perylene Diimide SCIE SCOPUS

Title
Air-Stable n-Channel Organic Thin-Film Transistors with High Field-Effect Mobility Based on N,N'-bis(heptafluorobutyl)-3,4:9,10-Perylene Diimide
Authors
Oh, JHShuhong LiuZhenan BaoRüdiger SchmidtFrank Würthner
Date Issued
2007-11-19
Publisher
American Institute of Physics
Abstract
The thin-film transistor characteristics of n-channel organic semiconductor, N,N-'-bis(2,2,3,3,4,4,4-heptafluorobutyl)-perylene tetracarboxylic diimide, are described. The slip-stacked face-to-face molecular packing allows a very dense parallel arrangement of the molecules, leading to field-effect mobility as high as 0.72 cm(2) V-1 s(-1). The mobility only slightly decreased after exposure to air and remained stable for more than 50 days. Our results reveal that molecular packing effects such as close stacking of perylene diimide units and segregation effects imparted by the fluorinated side chains are crucial for the air stability. (C) 2007 American Institute of Physics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/9555
DOI
10.1063/1.2803073
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 91, no. 21, page. 212107, 2007-11-19
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오준학OH, JOON HAK
Dept. of Chemical Enginrg
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