Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes
SCIE
SCOPUS
- Title
- Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes
- Authors
- Schubert, MF; Chhajed, S; Kim, JK; Schubert, EF; Koleske, DD; Crawford, MH; Lee, SR; Fischer, AJ; Thaler, G; Banas, MA
- Date Issued
- 2007-12-03
- Publisher
- AMER INST PHYSICS
- Abstract
- Measurements of light-output power versus current are performed for GaInN/GaN light-emitting diodes grown on GaN-on-sapphire templates with different threading dislocation densities. Low-defect-density devices exhibit a pronounced efficiency peak followed by droop as current increases, whereas high-defect-density devices show low peak efficiencies and little droop. The experimental data are analyzed with a rate equation model to explain this effect. Analysis reveals that dislocations do not strongly impact high-current performance; instead they contribute to increased nonradiative recombination at lower currents and a suppression of peak efficiency. The characteristics of the dominant recombination mechanism at high currents are consistent with processes involving carrier leakage.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9557
- DOI
- 10.1063/1.2822442
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 91, no. 23, 2007-12-03
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