Hybrid Selector With Excellent Selectivity and Fast Switching Speed for X-Point Memory Array

Abstract

In this letter, we demonstrate a new concept of threshold selector by combining Ag-based selector with NbOx insulator metal transition (IMT) selector. To overcome intrinsic limits of slow turn-off speed (>1 mu s) of the Ag-based selector, we adopted NbOx IMT selector with fast turn-off speed. The hybrid device exhibits excellent selector characteristics, such as extremely low off-current (<1 pA) and fast turn-off speed (<1 mu s). It shows excellent readout margin (>75% at > 210 word lines) in a fast sequential operation of cross point memory array.