Steep Slope Field-Effect Transistors With B-Te-Based Ovonic Threshold Switch Device
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- Title
- Steep Slope Field-Effect Transistors With B-Te-Based Ovonic Threshold Switch Device
- Authors
- 유종명; 이동욱; 박재혁; 송정환; Hwang, Hyunsang
- Date Issued
- 2018-07
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- In this letter, a new ovonic threshold switch (OTS) device based on simple binary Boron-Tellurium (B-Te) film is developed and implemented in series with the source region of a transistor. The newly developed B-Te-based device shows excellent characteristics such as low operating voltage, low leakage current, abrupt turn-on/off slope, fast switching speed, high endurance, and high thermal stability. Due to the great properties of the B-Te OTS device, the implemented transistor exhibits subthreshold swing less than 10 mV/dec and high on/off current ratio greater than 10(5). Moreover, we present a direction of implementing an ideal transistor based on simulation results explaining the effect of off-state resistances and threshold voltages of the OTS devices on the I-DS-V-GS characteristics of the implementer transistor.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/95727
- DOI
- 10.1109/JEDS.2018.2856853
- ISSN
- 2168-6734
- Article Type
- Article
- Citation
- IEEE Journal of the Electron Devices Society, vol. 6, no. 1, page. 821 - 824, 2018-07
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