Defect-Mediated In-Plane Electrical Conduction in Few-Layer sp(2)-Hybridized Boron Nitrides
SCIE
SCOPUS
- Title
- Defect-Mediated In-Plane Electrical Conduction in Few-Layer sp(2)-Hybridized Boron Nitrides
- Authors
- Kim, Dong Yeong; Jeong, Hokyeong; Kim, Jaewon; Han, Nam; Kim, Jong Kyu
- Date Issued
- 2018-05
- Publisher
- AMER CHEMICAL SOC
- Abstract
- In-plane electrical conduction in sp(2)-hybridized boron nitride (sp(2)-BN) is presented to explore a huge potential of sp(2)-BN as an active material for electronics and ultraviolet optoelectronics. Systematic investigation on temperature -dependent current-voltage (I-V) characteristics of a few-layer sp(2)-BN grown by metal organic vapor-phase epitaxy reveals two types of predominant conduction mechanisms that are Ohmic conduction at the low bias region and space-charge-limited conduction at the high bias region. From the temperature-dependent I-V characteristics, two shallow traps with activation energies of approximately 25 and 185 meV are observed. On the basis of the near-edge X-ray absorption fine-structure spectroscopy, boron-boron (B-B) homoelemental bonding which can be related to grain boundary and nitrogen vacancy (V-N) are proposed as the origin of the shallow traps mediating the in-plane conduction in the sp(2)-BN layer. In addition, a drastic enhancement in the electrical conductivity is observed with the increasing amount of VN that acts as a donor, implying that controlled generation of V-N can be an alternative and better approach for the n-type doping of the sp(2)-BN film rather than ineffective conventional substitutional doping methods.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/95896
- DOI
- 10.1021/acsami.8b04389
- ISSN
- 1944-8244
- Article Type
- Article
- Citation
- ACS APPLIED MATERIALS & INTERFACES, vol. 10, no. 20, page. 17287 - 17294, 2018-05
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