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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kannan, ES | - |
| dc.contributor.author | Kim, GH | - |
| dc.contributor.author | Kumar, S | - |
| dc.contributor.author | Farrer, I | - |
| dc.contributor.author | Ritchie, DA | - |
| dc.contributor.author | Son, JH | - |
| dc.contributor.author | Baik, JM | - |
| dc.contributor.author | Lee, JL | - |
| dc.contributor.author | Youn, DH | - |
| dc.contributor.author | Kang, KY | - |
| dc.date.accessioned | 2015-06-25T01:18:53Z | - |
| dc.date.available | 2015-06-25T01:18:53Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 2007-04-09 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.other | 2015-OAK-0000006753 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9600 | - |
| dc.description.abstract | Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the GaAs/AlGaAs quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of less than 5. However, with an increase in carrier density, quantum lifetime is observed to undergo a sharp transition from 0.17 to 0.25 ps. This is attributed to the screening of short range repulsive scattering due to InAs quantum dots by the 2DEG. (c) 2007 American Institute of Physics. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1063/1.2720704 | - |
| dc.author.google | Kannan, ES | en_US |
| dc.author.google | Kim, GH | en_US |
| dc.author.google | Kang, KY | en_US |
| dc.author.google | Youn, DH | en_US |
| dc.author.google | Lee, JL | en_US |
| dc.author.google | Baik, JM | en_US |
| dc.author.google | Son, JH | en_US |
| dc.author.google | Ritchie, DA | en_US |
| dc.author.google | Farrer, I | en_US |
| dc.author.google | Kumar, S | en_US |
| dc.relation.volume | 90 | en_US |
| dc.relation.issue | 15 | en_US |
| dc.contributor.id | 10105416 | en_US |
| dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.90, no.15 | - |
| dc.identifier.wosid | 000245690700060 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.number | 15 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 90 | - |
| dc.contributor.affiliatedAuthor | Lee, JL | - |
| dc.identifier.scopusid | 2-s2.0-34247247837 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 8 | - |
| dc.description.scptc | 9 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg