DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Y | - |
dc.contributor.author | Cho, JH | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Park, YD | - |
dc.contributor.author | Hwang, M | - |
dc.contributor.author | Cho, K | - |
dc.date.accessioned | 2015-06-25T01:19:13Z | - |
dc.date.available | 2015-06-25T01:19:13Z | - |
dc.date.created | 2009-08-25 | - |
dc.date.issued | 2007-03-26 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000006694 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9602 | - |
dc.description.abstract | In order to investigate the effects of permanent dipoles on insulator surfaces on the electrical properties of organic thin-film transistors, the authors fabricated insulators with various self-assembled monolayers and similar surface energies. Surprisingly, they found that the field-effect mobility of pentacene thin-film transistors increases by a factor of approximately 20 for insulators with an electron-withdrawing group. This remarkable increase in the field-effect mobility is due to the increase in the hole density of the insulator surface that arises from the increased band bending of the insulator/semiconductor interface. (c) 2007 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.2457776 | - |
dc.author.google | Jang, Y | en_US |
dc.author.google | Cho, JH | en_US |
dc.author.google | Cho, K | en_US |
dc.author.google | Hwang, M | en_US |
dc.author.google | Park, YD | en_US |
dc.author.google | Kim, DH | en_US |
dc.relation.volume | 90 | en_US |
dc.relation.issue | 13 | en_US |
dc.relation.startpage | 132104 | en_US |
dc.relation.lastpage | 132104 | en_US |
dc.contributor.id | 10077904 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.90, no.13, pp.132104 - 132104 | - |
dc.identifier.wosid | 000245317100038 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 132104 | - |
dc.citation.number | 13 | - |
dc.citation.startPage | 132104 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 90 | - |
dc.contributor.affiliatedAuthor | Cho, K | - |
dc.identifier.scopusid | 2-s2.0-34047137875 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 71 | - |
dc.description.scptc | 81 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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