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Cited 84 time in webofscience Cited 99 time in scopus
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dc.contributor.authorJang, Y-
dc.contributor.authorCho, JH-
dc.contributor.authorKim, DH-
dc.contributor.authorPark, YD-
dc.contributor.authorHwang, M-
dc.contributor.authorCho, K-
dc.date.accessioned2015-06-25T01:19:13Z-
dc.date.available2015-06-25T01:19:13Z-
dc.date.created2009-08-25-
dc.date.issued2007-03-26-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000006694en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9602-
dc.description.abstractIn order to investigate the effects of permanent dipoles on insulator surfaces on the electrical properties of organic thin-film transistors, the authors fabricated insulators with various self-assembled monolayers and similar surface energies. Surprisingly, they found that the field-effect mobility of pentacene thin-film transistors increases by a factor of approximately 20 for insulators with an electron-withdrawing group. This remarkable increase in the field-effect mobility is due to the increase in the hole density of the insulator surface that arises from the increased band bending of the insulator/semiconductor interface. (c) 2007 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleEffects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1063/1.2457776-
dc.author.googleJang, Yen_US
dc.author.googleCho, JHen_US
dc.author.googleCho, Ken_US
dc.author.googleHwang, Men_US
dc.author.googlePark, YDen_US
dc.author.googleKim, DHen_US
dc.relation.volume90en_US
dc.relation.issue13en_US
dc.relation.startpage132104en_US
dc.relation.lastpage132104en_US
dc.contributor.id10077904en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.90, no.13, pp.132104 - 132104-
dc.identifier.wosid000245317100038-
dc.date.tcdate2019-01-01-
dc.citation.endPage132104-
dc.citation.number13-
dc.citation.startPage132104-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume90-
dc.contributor.affiliatedAuthorCho, K-
dc.identifier.scopusid2-s2.0-34047137875-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc71-
dc.description.scptc81*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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