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Cited 78 time in webofscience Cited 78 time in scopus
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dc.contributor.authorBorse, PH-
dc.contributor.authorJoshi, UA-
dc.contributor.authorJi, SM-
dc.contributor.authorJang, JS-
dc.contributor.authorLee, JS-
dc.contributor.authorJeong, ED-
dc.contributor.authorKim, HG-
dc.date.accessioned2015-06-25T01:19:32Z-
dc.date.available2015-06-25T01:19:32Z-
dc.date.created2009-02-28-
dc.date.issued2007-01-15-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000006523en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9607-
dc.description.abstractThe Pb substitution effect was investigated experimentally and theoretically on the crystal structure of BaSnO3 and on the photo-oxidation activity of H2O. The chemically doped Pb in BaSnO3 induced a concentration-dependent redshift of the experimental band gap (BG). The BaPb0.8Sn0.2O3 system produced 32 mu mol/h of O-2 under lambda >= 420 nm photons, but no O-2 for BaSnO3. The DFT calculations of BaPbxSn1-xO3 (x=0,0.5,1) by using generalized approximation, implying the BG alteration and the photocatalytic activity of BaPbxSn1-xO3, are due to the induced Pb 6s orbital in the BG of BaSnO3. Thus Pb modified the insulating nature of BaSnO3 to semiconducting and semimetallic. (c) 2007 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleBand gap tuning of lead-substituted BaSnO3 for visible light photocatalysis-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1063/1.2430932-
dc.author.googleBorse, PHen_US
dc.author.googleJoshi, UAen_US
dc.author.googleKim, HGen_US
dc.author.googleJeong, EDen_US
dc.author.googleLee, JSen_US
dc.author.googleJang, JSen_US
dc.author.googleJi, SMen_US
dc.relation.volume90en_US
dc.relation.issue3en_US
dc.contributor.id10087281en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.90, no.3-
dc.identifier.wosid000243582400103-
dc.date.tcdate2019-01-01-
dc.citation.number3-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume90-
dc.contributor.affiliatedAuthorLee, JS-
dc.identifier.scopusid2-s2.0-33846455403-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc49-
dc.description.scptc56*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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