Correlated reduction in micropipe cross sections in SiC growth

Abstract

We reveal a correlated reduction in the cross sections of two neighboring micropipes (MPs) in the crystal growth of silicon carbide using computer simulation of phase contrast images. The correlated reduction is explained by the exchange of full-core dislocations in a contact-free reaction between two parallel MPs. We develop a theoretical model that describes the energetics of this process. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2998572]