Origin of high mobility within an amorphous polymeric semiconductor: Space-charge-limited current and trap distribution
SCIE
SCOPUS
- Title
- Origin of high mobility within an amorphous polymeric semiconductor: Space-charge-limited current and trap distribution
- Authors
- Chung, DS; Lee, DH; Yang, C; Hong, K; Park, CE; Park, JW; Kwon, SK
- Date Issued
- 2008-07-21
- Publisher
- AMER INST PHYSICS
- Abstract
- To elucidate the origin of the high field-effect mobility (approximate to 0.02 cm(2)/V s) of amorphous poly[(1,2-bis-(2(')-thienyl)vinyl-5('),5(')-diyl)-alt-(9,9-dioctyldecylfluorene-2,7-diyl], we investigated the current density-voltage (J-V) and mobility-voltage (mu-V) relationships as a function of temperature. By using the power law model and the Gaussian hopping model, we determined a characteristic trap energy of 67 meV, an energetic disorder parameter of 64 meV, and a total trap density of 2.5x10(16) cm(-3), comparable to that of poly(3-hexylthiophene). We conclude that the relatively low trap density, which originates from the grain-boundary-free amorphous nature of the semiconductor, enables this high field-effect mobility. (C) 2008 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9630
- DOI
- 10.1063/1.2958213
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 93, no. 3, 2008-07-21
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