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A Mechanism for TiO2 Formation on Stepped TiN (001) from First-Principles Calculations SCIE SCOPUS

Title
A Mechanism for TiO2 Formation on Stepped TiN (001) from First-Principles Calculations
Authors
Hong, MinkiLEE, DONGHWAPhillpot, Simon R.Sinnott, Susan B.
Date Issued
2014-01-09
Publisher
AMER CHEMICAL SOC
Abstract
The adsorption of O-2 on the TiN(001) stepped surface and the consequent formation of surface oxide have been characterized using first-principles calculations. The adsorption and dissociation of O-2 on both the flat and the stepped surface are predicted to be spontaneous. Compared with the flat surface, however, the dissociation of O-2 on the stepped surface is predicted to be more exothermic. A formation mechanism for TiO2 at the step is proposed that includes a nitrogen exit channel that enables further oxidation.
URI
https://oasis.postech.ac.kr/handle/2014.oak/96332
DOI
10.1021/jp409494q
ISSN
1932-7447
Article Type
Article
Citation
Journal of Physical Chemistry C, vol. 118, no. 1, page. 384 - 388, 2014-01-09
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이동화LEE, DONGHWA
Dept of Materials Science & Enginrg
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