Hysteresis-free organic field-effect transistors and inverters using photocrosslinkable poly(vinyl cinnamate) as a gate dielectric

Abstract

We have fabricated organic field-effect transistors (OFETs) and inverters using photocrosslinkable poly(vinyl cinnamate) (PVCN) as a gate dielectric. The photocrosslinked PVCN dielectric film has superior insulating properties and does not require thermal curing. The high water resistance of the dielectric, which arises because PVCN is hydroxyl group-free, means that the devices were found to be hysteresis-free in all operations. The OFETs with the PVCN dielectric were found to exhibit a carrier mobility of 0.51 cm(2)/V s, an on/off ratio of 10(6), and a subthreshold swing of 0.913 V/decade. An organic inverter consisting of two OFETs exhibited a high inverter gain of 17.9. (C) 2008 American Institute of Physics.