High performance polythiophene thin-film transistors doped with very small amounts of an electron acceptor
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- Title
- High performance polythiophene thin-film transistors doped with very small amounts of an electron acceptor
- Authors
- Ma, L; Lee, WH; Park, YD; Kim, JS; Lee, HS; Cho, K
- Date Issued
- 2008-02-11
- Publisher
- AMER INST PHYSICS
- Abstract
- The relationship between the electrical properties and the microstructure of poly(3-hexylthiophene) (P3HT) films doped with an electron acceptor, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F-4-TCNQ) has been studied. The introduction of F-4-TCNQ in very small quantities improved the device performance of P3HT thin-film transistors significantly. The field-effect mobility of a device doped with only 0.2 wt % F-4-TCNQ was enhanced by a factor of 30 with respect to that of a pure P3HT device. The threshold voltages of the P3HT thin-film transistors can also be controlled by adjusting the F-4-TCNQ concentration. These improvements are attributed to the doping-induced formation of charge-transfer complexes and improved molecular orientation of the P3HT. (C) 2008 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9642
- DOI
- 10.1063/1.2883927
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 92, no. 6, 2008-02-11
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