DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, JH | - |
dc.contributor.author | Song, YH | - |
dc.contributor.author | Yu, HK | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:23:35Z | - |
dc.date.available | 2015-06-25T01:23:35Z | - |
dc.date.created | 2009-10-08 | - |
dc.date.issued | 2009-08-10 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000019159 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9672 | - |
dc.description.abstract | We investigate effects of Ni cladding layers on suppression of Ag agglomeration in Ag contacts on p-GaN using high-resolution x-ray diffraction. In the annealed Ag contact, Ag (100) grains disappear and agglomerate to form a selectively epitaxial growth of Ag (111). An ultrathin Ni contact layer (10 A degrees) below Ag film plays a role to epitaxially grow (111) Ag films on GaN, leading to the suppression of Ag agglomeration. A 20-A degrees-thick Ni overlayer effectively acts as a passivation layer to prevent the surface diffusion of Ag atoms during annealing, leading to high light reflectance and low contact resistivity. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Effects of Ni cladding layers on suppression of Ag agglomeration in Ag-based Ohmic contacts on p-GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.3206742 | - |
dc.author.google | Son, JH | en_US |
dc.author.google | Song, YH | en_US |
dc.author.google | Lee, JL | en_US |
dc.author.google | Yu, HK | en_US |
dc.relation.volume | 95 | en_US |
dc.relation.issue | 6 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.95, no.6 | - |
dc.identifier.wosid | 000269060600028 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 6 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 95 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-69049118169 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 22 | - |
dc.description.scptc | 27 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | DIFFUSION | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | claddings | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | epitaxial growth | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | light reflection | - |
dc.subject.keywordAuthor | nickel | - |
dc.subject.keywordAuthor | ohmic contacts | - |
dc.subject.keywordAuthor | silver | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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