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Cited 71 time in webofscience Cited 59 time in scopus
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dc.contributor.authorLu, YX-
dc.contributor.authorLee, WH-
dc.contributor.authorLee, HS-
dc.contributor.authorJang, Y-
dc.contributor.authorCho, K-
dc.date.accessioned2015-06-25T01:23:58Z-
dc.date.available2015-06-25T01:23:58Z-
dc.date.created2009-08-25-
dc.date.issued2009-03-16-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000018475en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9678-
dc.description.abstractPentacene-based low-voltage organic transistors were realized with titanium oxide/polystyrene (TiO(2)/PS) bilayer dielectrics. Significantly, the TiO(2) bottom layer was fabricated by a layer-by-layer deposition procedure and had an ultrathin thickness (< 5 nm). The nonpolar PS top layer not only shields out the high polarity TiO(2) layer, but also reduces the roughness of the dielectric, which results in low gate leakage of dielectric and the more ordered growth of pentacene film. This organic transistor with a TiO(2)/PS bilayer dielectric was found to exhibit high performance with a low operating voltage (<= 3 V), and a high on/off ratio (>10(7)).-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleLow-voltage organic transistors with titanium oxide/polystyrene bilayer dielectrics-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1063/1.3097010-
dc.author.googleLu, YXen_US
dc.author.googleLee, WHen_US
dc.author.googleCho, Ken_US
dc.author.googleJang, Yen_US
dc.author.googleLee, HSen_US
dc.relation.volume94en_US
dc.relation.issue11en_US
dc.contributor.id10077904en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.94, no.11-
dc.identifier.wosid000264380300075-
dc.date.tcdate2019-01-01-
dc.citation.number11-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume94-
dc.contributor.affiliatedAuthorCho, K-
dc.identifier.scopusid2-s2.0-63049095767-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc48-
dc.description.scptc42*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusGATE DIELECTRICS-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusINSULATORS-
dc.subject.keywordPlusINVERTERS-
dc.subject.keywordPlusDISPLAYS-
dc.subject.keywordPlusMATRIX-
dc.subject.keywordPlusPAPER-
dc.subject.keywordAuthordielectric thin films-
dc.subject.keywordAuthororganic field effect transistors-
dc.subject.keywordAuthorpolymer films-
dc.subject.keywordAuthorthin film transistors-
dc.subject.keywordAuthortitanium compounds-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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