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Cited 51 time in webofscience Cited 51 time in scopus
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dc.contributor.authorJang, Y-
dc.contributor.authorLee, WH-
dc.contributor.authorPark, YD-
dc.contributor.authorKwak, D-
dc.contributor.authorCho, JH-
dc.contributor.authorCho, K-
dc.date.accessioned2015-06-25T01:24:02Z-
dc.date.available2015-06-25T01:24:02Z-
dc.date.created2009-08-25-
dc.date.issued2009-05-04-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000018472en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9679-
dc.description.abstractHigh field-effect mobility organic thin-film transistors with nanoparticle polymer composite/polymer bilayer insulators were fabricated. A device composed of a polyvinylphenol (PVP) insulator filled with barium strontium titanate (BST) nanoparticles and coated with a thin polystyrene film was found to exhibit a field-effect mobility (1.2 cm(2) V(-1) s(-1) for a pentacene device) and a field-induced current that are superior to those of devices with only a PVP insulator or a BST-filled PVP insulator. These improvements in the performance are due to an increase in the capacitance and a reduction in the interface roughness of the insulator.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleHigh field-effect mobility pentacene thin-film transistors with nanoparticle polymer composite/polymer bilayer insulators-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1063/1.3124660-
dc.author.googleJang, Yen_US
dc.author.googleLee, WHen_US
dc.author.googleCho, Ken_US
dc.author.googleCho, JHen_US
dc.author.googleKwak, Den_US
dc.author.googlePark, YDen_US
dc.relation.volume94en_US
dc.relation.issue18en_US
dc.contributor.id10077904en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.94, no.18-
dc.identifier.wosid000265933700059-
dc.date.tcdate2019-01-01-
dc.citation.number18-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume94-
dc.contributor.affiliatedAuthorCho, K-
dc.identifier.scopusid2-s2.0-65549132856-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc35-
dc.description.scptc38*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusORGANIC TRANSISTORS-
dc.subject.keywordPlusLOW-VOLTAGE-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusROUGHNESS-
dc.subject.keywordAuthorbarium compounds-
dc.subject.keywordAuthorfilled polymers-
dc.subject.keywordAuthorinterface roughness-
dc.subject.keywordAuthornanocomposites-
dc.subject.keywordAuthornanoparticles-
dc.subject.keywordAuthororganic semiconductors-
dc.subject.keywordAuthorstrontium compounds-
dc.subject.keywordAuthorthin film transistors-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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