DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, JH | - |
dc.contributor.author | Peng Wei | - |
dc.contributor.author | Zhenan Bao | - |
dc.date.accessioned | 2015-06-25T01:24:38Z | - |
dc.date.available | 2015-06-25T01:24:38Z | - |
dc.date.created | 2014-09-30 | - |
dc.date.issued | 2010-12-13 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000030339 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9689 | - |
dc.description.abstract | The effects of n-type doping on the air-stability of vacuum-processed n-channel organic transistors have been investigated using perylene diimides and pyronin B as the active layer and dopant, respectively. Systematic studies on the influence of doping location revealed the n-type doping of bulk active layer or channel region significantly improves air-stability by compensating for the trapped electrons with the donated mobile electrons. Although n-type doping at the electrode contact could readily turn on the devices, it could not confer air-stable electron transport. The described approach would open up opportunities to enable and improve the stability of n-channel organic transistors in air. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3527972] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AIP Publishing LLC | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Molecular n-type doping for air-stable electron transport in vacuum-processed n-channel organic transistors | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.3527972 | - |
dc.author.google | Oh, JH | en_US |
dc.author.google | Wei, P | en_US |
dc.author.google | Bao, ZN | en_US |
dc.relation.volume | 97 | en_US |
dc.relation.issue | 24 | en_US |
dc.relation.startpage | 243305 | en_US |
dc.contributor.id | 10165224 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.97, no.24, pp.243305 | - |
dc.identifier.wosid | 000285481000079 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 243305 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 97 | - |
dc.contributor.affiliatedAuthor | Oh, JH | - |
dc.identifier.scopusid | 2-s2.0-78650385731 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 53 | - |
dc.description.scptc | 51 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | CHARGE-TRANSPORT | - |
dc.subject.keywordPlus | PYRONIN-B | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | DIANHYDRIDE | - |
dc.subject.keywordPlus | DOPANT | - |
dc.subject.keywordPlus | LAYERS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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