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dc.contributor.authorLEEJONGWON-
dc.contributor.authorHWANG, HYUNSANG-
dc.contributor.authorKWAK, MYOUNG HOON-
dc.contributor.authorSEOKJAE, LIM-
dc.date.accessioned2019-04-08T02:54:45Z-
dc.date.available2019-04-08T02:54:45Z-
dc.date.created2019-03-13-
dc.date.issued2019-02-14-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/97144-
dc.publisher한국반도체산업협회, 한국반도체연구조합-
dc.relation.isPartOfThe 26th Korean Conference on Semiconductors / 제 26회 한국반도체학술대회-
dc.relation.isPartOf제 26회 한국반도체학술대회-
dc.titleProton–Based Three–Terminal Synapse Device with Analog Conductance Change and Linear I-V Characteristics for Neuromorphic Systems-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 26th Korean Conference on Semiconductors / 제 26회 한국반도체학술대회-
dc.citation.conferenceDate2019-02-13-
dc.citation.conferencePlaceKO-
dc.citation.titleThe 26th Korean Conference on Semiconductors / 제 26회 한국반도체학술대회-
dc.contributor.affiliatedAuthorLEEJONGWON-
dc.contributor.affiliatedAuthorHWANG, HYUNSANG-
dc.contributor.affiliatedAuthorKWAK, MYOUNG HOON-
dc.contributor.affiliatedAuthorSEOKJAE, LIM-
dc.description.journalClass2-
dc.description.journalClass2-

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황현상HWANG, HYUNSANG
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