DC Field | Value | Language |
---|---|---|
dc.contributor.author | Song, YH | - |
dc.contributor.author | Son, JH | - |
dc.contributor.author | Kim, BJ | - |
dc.contributor.author | Yu, HK | - |
dc.contributor.author | Yoo, CJ | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:26:25Z | - |
dc.date.available | 2015-06-25T01:26:25Z | - |
dc.date.created | 2012-01-10 | - |
dc.date.issued | 2011-12-05 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000024471 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9718 | - |
dc.description.abstract | We investigate the effect of W diffusion barrier in Ti/W/Al ohmic contacts formed on N-face n-GaN. The contacts exhibit contact resistivity of as low as 2.3 x 10(-4) Omega cm(2) and better thermal stability than Ti/Al contacts. Cross-sectional transmission electron microscopy micrographs reveal that in-diffused Al atoms on the n-GaN surface react with N atoms to form an AlN layer in Ti/Al contacts, resulting in upward band bending, and consequently, a high contact resistivity. The use of a 10-nm-thick W layer suppresses the in-diffusion of Al atoms to n-GaN, thereby preventing the formation of AlN and enhancing the thermal stability of Ti/W/Al contacts. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665623] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMERICAN INSTITUE OF PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Effects of W diffusion barrier on inhibition of AlN formation in Ti/W/Al ohmic contacts on N-face n-GaN | - |
dc.type | Article | - |
dc.contributor.college | 첨단재료과학부 | en_US |
dc.identifier.doi | 10.1063/1.3665623 | - |
dc.author.google | Song, YH | en_US |
dc.author.google | Son, JH | en_US |
dc.author.google | Lee, JL | en_US |
dc.author.google | Yoo, CJ | en_US |
dc.author.google | Yu, HK | en_US |
dc.author.google | Kim, BJ | en_US |
dc.relation.volume | 99 | en_US |
dc.relation.issue | 23 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.99, no.23 | - |
dc.identifier.wosid | 000298006100088 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 23 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 99 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-83455200212 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 2 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | EMISSION | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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