DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung, Y | - |
dc.contributor.author | Johnson, O | - |
dc.contributor.author | Deal, M | - |
dc.contributor.author | Nishi, Y | - |
dc.contributor.author | Murmann, B | - |
dc.contributor.author | Bao, ZA | - |
dc.date.accessioned | 2015-06-25T01:27:14Z | - |
dc.date.available | 2015-06-25T01:27:14Z | - |
dc.date.created | 2015-02-09 | - |
dc.date.issued | 2012-08 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000031860 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9732 | - |
dc.description.abstract | For practical applications of organic field-effect transistors (OFETs), the control of threshold voltage (V-TH) is important as different circuits require different electrical characteristics. Here, we demonstrate two types of gate electrode structures to achieve this control, namely, via dual-metal gates and bilayer metal gates. The first approach uses different metallic materials, titanium, and platinum, while the second approach uses different thicknesses in a metal bilayer composed of aluminum and platinum. Our results show that the VTH is varied by more than 20% of the supply voltage without affecting the field-effect mobility values for both pentacene p-channel and C-60 n-channel OFETs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739511] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AIP Publishing | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Engineering the Metal Gate Electrode for Controlling the Threshold Voltage of Organic Transistors | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | en_US |
dc.identifier.doi | 10.1063/1.4739511 | - |
dc.author.google | Chung, Y | en_US |
dc.author.google | Johnson, O | en_US |
dc.author.google | Bao, ZA | en_US |
dc.author.google | Murmann, B | en_US |
dc.author.google | Nishi, Y | en_US |
dc.author.google | Deal, M | en_US |
dc.relation.volume | 101 | en_US |
dc.relation.issue | 6 | en_US |
dc.relation.startpage | 63304 | en_US |
dc.contributor.id | 11087558 | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.101, no.6, pp.63304 | - |
dc.identifier.wosid | 000307862400089 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 63304 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 101 | - |
dc.contributor.affiliatedAuthor | Chung, Y | - |
dc.identifier.scopusid | 2-s2.0-84865142656 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 14 | - |
dc.description.scptc | 15 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | SHIFT | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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