DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rani, Adila | - |
dc.contributor.author | Song, Ji-Min | - |
dc.contributor.author | Lee, Mi Jung | - |
dc.contributor.author | Lee, JS | - |
dc.date.accessioned | 2015-06-25T01:27:22Z | - |
dc.date.available | 2015-06-25T01:27:22Z | - |
dc.date.created | 2014-08-27 | - |
dc.date.issued | 2012-12-03 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000030223 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9734 | - |
dc.description.abstract | A nonvolatile organic transistor memory device was developed using layer-by-layer assembly of 3-aminopropyltriethoxysilane (APTES) and solution-processed, reduced graphene oxide (rGO) as the charge trapping layer on flexible substrates. Reduction of graphene oxide and successful adsorption of the rGO on APTES-covered substrates were confirmed. The organic memory devices based on rGO exhibited reliable programmable memory operations, confirmed by program/erase operations, data retention, and endurance properties. These methods can potentially play a significant role in the fabrication of next-generation flexible nonvolatile memory devices based on graphene materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769990] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Reduced graphene oxide based flexible organic charge trap memory devices | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.4769990 | - |
dc.author.google | Rani, A | en_US |
dc.author.google | Song, JM | en_US |
dc.author.google | Lee, JS | en_US |
dc.author.google | Lee, MJ | en_US |
dc.relation.volume | 101 | en_US |
dc.relation.issue | 23 | en_US |
dc.contributor.id | 10174741 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.101, no.23 | - |
dc.identifier.wosid | 000312243900081 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 23 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 101 | - |
dc.contributor.affiliatedAuthor | Lee, JS | - |
dc.identifier.scopusid | 2-s2.0-84870944457 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 28 | - |
dc.description.scptc | 31 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | TRANSPARENT ELECTRODES | - |
dc.subject.keywordPlus | FLASH MEMORY | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | SHEETS | - |
dc.subject.keywordPlus | OPTOELECTRONICS | - |
dc.subject.keywordPlus | NANOSHEETS | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | CELLS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.