DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, J | - |
dc.contributor.author | Chobpattana, V | - |
dc.contributor.author | McSkimming, BM | - |
dc.contributor.author | Stemmer, S | - |
dc.date.accessioned | 2015-06-25T01:27:51Z | - |
dc.date.available | 2015-06-25T01:27:51Z | - |
dc.date.created | 2013-04-11 | - |
dc.date.issued | 2012-09-03 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000027450 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9742 | - |
dc.description.abstract | The location and nature of fixed charge states in high-k/GaN metal-oxide-semiconductor capacitor structures are characterized by analyzing flatband voltage shifts in high-frequency capacitance-voltage measurements. It is shown that a significant fixed, positive sheet charge forms at Al2O3/GaN interfaces, but not at HfO2/GaN interfaces. Furthermore, an interface dipole is created at HfO2/Al2O3 interfaces, which causes an abrupt shift in the flat band voltage as HfO2 is introduced to form HfO2/Al2O3 bilayer dielectrics. The observed dependence of the flatband voltage shift on the relative thicknesses of the dielectrics comprising the bilayer dielectrics is discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751466] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | American institute of physics | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.4751466 | - |
dc.author.google | Son, J | en_US |
dc.author.google | Chobpattana, V | en_US |
dc.author.google | Stemmer, S | en_US |
dc.author.google | McSkimming, BM | en_US |
dc.relation.volume | 101 | en_US |
dc.relation.issue | 10 | en_US |
dc.contributor.id | 10138992 | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.101, no.10 | - |
dc.identifier.wosid | 000309072800052 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 10 | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 101 | - |
dc.contributor.affiliatedAuthor | Son, J | - |
dc.identifier.scopusid | 2-s2.0-84866045390 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 43 | - |
dc.description.scptc | 43 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | AL2O3 | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordPlus | HFO2 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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