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Cited 9 time in webofscience Cited 10 time in scopus
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dc.contributor.authorJun Hyun Han-
dc.contributor.authorKyung Song-
dc.contributor.authorShankar Radhakrishnan-
dc.contributor.authorOh, SH-
dc.contributor.authorChung Hoon Lee-
dc.date.accessioned2015-06-25T01:28:07Z-
dc.date.available2015-06-25T01:28:07Z-
dc.date.created2013-03-11-
dc.date.issued2012-10-29-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000027057en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9746-
dc.description.abstractA sub-nanometer scale suspended gap (nanogap) defined by electric field-induced atomically sharp metallic tips is presented. A strong local electric field (>10(9) V/m) across micro/nanomachined tips facing each other causes the metal ion migration in the form of dendrite-like growth at the cathode. The nanogap is fully isolated from the substrate eliminating growth mechanisms that involve substrate interactions. The proposed mechanism of ion transportation is verified using real-time imaging of the metal ion transportation using an in situ biasing in transmission electron microscope (TEM). The configuration of the micro/nanomachined suspended tips allows nanostructure growth of a wide variety of materials including metals, metal-oxides, and polymers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764562]-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAmerical Institute of Physics-
dc.relation.isPartOfApplied Physics Letters-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleA Suspended Nanogap Formed by Field-induced Atomically Sharp Tips-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.4764562-
dc.author.googleHan, JHen_US
dc.author.googleSong, Ken_US
dc.author.googleLee, CHen_US
dc.author.googleOh, SHen_US
dc.author.googleRadhakrishnan, Sen_US
dc.relation.volume101en_US
dc.relation.issue18en_US
dc.relation.startpage183106en_US
dc.contributor.id10608365en_US
dc.relation.journalApplied Physics Lettersen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationApplied Physics Letters, v.101, no.18, pp.183106-
dc.identifier.wosid000311064500050-
dc.date.tcdate2019-01-01-
dc.citation.number18-
dc.citation.startPage183106-
dc.citation.titleApplied Physics Letters-
dc.citation.volume101-
dc.contributor.affiliatedAuthorOh, SH-
dc.identifier.scopusid2-s2.0-84868661406-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc8-
dc.description.scptc9*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTROMIGRATION-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusMEMORIES-
dc.subject.keywordPlusCONTACTS-
dc.subject.keywordPlusDEVICES-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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오상호OH, SANG HO
Dept of Materials Science & Enginrg
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