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Cited 74 time in webofscience Cited 75 time in scopus
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dc.contributor.authorSeo, SM-
dc.contributor.authorKim, KW-
dc.contributor.authorRyu, J-
dc.contributor.authorLee, HW-
dc.contributor.authorLee, KJ-
dc.date.accessioned2015-06-25T01:28:28Z-
dc.date.available2015-06-25T01:28:28Z-
dc.date.created2013-03-07-
dc.date.issued2012-07-09-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000026792en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9752-
dc.description.abstractWe theoretically study current-induced dynamics of a transverse magnetic domain wall in bi-layer nanowires consisting of a ferromagnetic layer on top of a nonmagnetic layer with strong spin-orbit coupling. Domain wall dynamics is characterized by two threshold current densities, J(th)(WB) and J(th)(REV), where J(th)(WB) is a threshold for the chirality switching of the domain wall and J(th)(REV) is another threshold for the reversed domain wall motion caused by spin Hall effect. Domain walls with a certain chirality may move opposite to the electron-flow direction with high speed in the current range J(th)(REV) < J < J(th)(WB) for the system designed to satisfy the conditions J(th)(WB) > J(th)(REV) and alpha > beta, where alpha is the Gilbert damping constant and beta is the nonadiabaticity of spin torque. Micromagnetic simulations confirm the validity of analytical results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733674]-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleCurrent-induced motion of a transverse magnetic domain wall in the presence of spin Hall effect-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1063/1.4733674-
dc.author.googleSeo, SMen_US
dc.author.googleKim, KWen_US
dc.author.googleLee, KJen_US
dc.author.googleLee, HWen_US
dc.author.googleRyu, Jen_US
dc.relation.volume101en_US
dc.relation.issue2en_US
dc.relation.startpage22405en_US
dc.contributor.id10084423en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.101, no.2, pp.22405-
dc.identifier.wosid000306360600043-
dc.date.tcdate2019-01-01-
dc.citation.number2-
dc.citation.startPage22405-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume101-
dc.contributor.affiliatedAuthorLee, HW-
dc.identifier.scopusid2-s2.0-84863930066-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc59-
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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