DC Field | Value | Language |
---|---|---|
dc.contributor.author | Joo, S | - |
dc.contributor.author | Jung, KY | - |
dc.contributor.author | Lee, BC | - |
dc.contributor.author | Kim, TS | - |
dc.contributor.author | Shin, KH | - |
dc.contributor.author | Jung, MH | - |
dc.contributor.author | Rho, KJ | - |
dc.contributor.author | Park, JH | - |
dc.contributor.author | Hong, J | - |
dc.contributor.author | Rhie, K | - |
dc.date.accessioned | 2015-06-25T01:28:46Z | - |
dc.date.available | 2015-06-25T01:28:46Z | - |
dc.date.created | 2012-08-14 | - |
dc.date.issued | 2012-04-23 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000025737 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9757 | - |
dc.description.abstract | The ferromagnetic layer in magnetic tunnel junctions (MTJs) was oxidized with varying O-2 concentrations, and the corresponding effect on spin-dependent transport was studied. As expected from our previous results for MTJs with an over-oxidized AlOx tunnel barrier, a partially oxidized ferromagnetic layer plays an important role in spin-dependent transport. As the temperature is lowered, the junction resistance increases dramatically, and the tunneling magnetoresistance (TMR) is strongly suppressed. Increasing the O-2 concentration enhances the increase of resistance and suppression of TMR. This work supports our previous conclusion that oxidizing the ferromagnetic layer generates localized magnetic moments, which act as a scattering center for spin-polarized tunneling electrons. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704557] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Effect of oxidizing the ferromagnetic electrode in magnetic tunnel junctions on tunneling magnetoresistance | - |
dc.type | Article | - |
dc.contributor.college | 첨단재료과학부 | en_US |
dc.identifier.doi | 10.1063/1.4704557 | - |
dc.author.google | Joo, S | en_US |
dc.author.google | Jung, KY | en_US |
dc.author.google | Rho, KJ | en_US |
dc.author.google | Jung, MH | en_US |
dc.author.google | Shin, KH | en_US |
dc.author.google | Kim, TS | en_US |
dc.author.google | Lee, BC | en_US |
dc.relation.volume | 100 | en_US |
dc.relation.issue | 17 | en_US |
dc.relation.startpage | 172406 | en_US |
dc.contributor.id | 10080407 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.17, pp.172406 | - |
dc.identifier.wosid | 000303340300050 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 17 | - |
dc.citation.startPage | 172406 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 100 | - |
dc.contributor.affiliatedAuthor | Park, JH | - |
dc.identifier.scopusid | 2-s2.0-84860318539 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.description.scptc | 8 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | EXCHANGE MODEL | - |
dc.subject.keywordPlus | ANOMALIES | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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