DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, M | - |
dc.contributor.author | Jang, J | - |
dc.contributor.author | Park, S | - |
dc.contributor.author | Kim, J | - |
dc.contributor.author | Seong, J | - |
dc.contributor.author | Hwang, J | - |
dc.contributor.author | Park, CE | - |
dc.date.accessioned | 2015-06-25T01:28:57Z | - |
dc.date.available | 2015-06-25T01:28:57Z | - |
dc.date.created | 2012-05-30 | - |
dc.date.issued | 2012-03-05 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000025553 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9760 | - |
dc.description.abstract | We investigated the influence of organic dielectric surfaces on the electrical characteristics of inorganic amorphous indium-gallium-zinc oxide (a-IGZO)-based thin film transistors (TFTs). To modify the dielectric surface, various self-assembled monolayers and polymer thin films with different functional groups were introduced. Electrical measurements of the a-IGZO TFTs using surface-modified gate dielectrics revealed that the threshold voltages shifted toward positive values as the surface functional groups attract more electrons in the a-IGZO thin films. These results indicate that the channel conductance and carrier density of a-IGZO TFTs could be tuned by simple modification of the dielectric surfaces with organic materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691920] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistors | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.3691920 | - |
dc.author.google | Park, M | en_US |
dc.author.google | Jang, J | en_US |
dc.author.google | Park, CE | en_US |
dc.author.google | Hwang, J | en_US |
dc.author.google | Seong, J | en_US |
dc.author.google | Kim, J | en_US |
dc.author.google | Park, S | en_US |
dc.relation.volume | 100 | en_US |
dc.relation.issue | 10 | en_US |
dc.contributor.id | 10104044 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.10 | - |
dc.identifier.wosid | 000301655500039 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 10 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 100 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-84863367631 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 10 | - |
dc.description.scptc | 9 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTORS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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