DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bharathi, KK | - |
dc.contributor.author | Lee, WM | - |
dc.contributor.author | Sung, JH | - |
dc.contributor.author | Lim, JS | - |
dc.contributor.author | Kim, SJ | - |
dc.contributor.author | Chu, K | - |
dc.contributor.author | Park, JW | - |
dc.contributor.author | Song, JH | - |
dc.contributor.author | Jo, MH | - |
dc.contributor.author | Yang, CH | - |
dc.date.accessioned | 2015-06-25T01:29:30Z | - |
dc.date.available | 2015-06-25T01:29:30Z | - |
dc.date.created | 2014-03-19 | - |
dc.date.issued | 2013-01-07 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000029616 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9769 | - |
dc.description.abstract | We report on the visualization of n-p junctions formed by oxygen vacancy movement under the application of an electric field in a Ca-doped BiFeO3 thin film through spatially resolved scanning photocurrent mapping. The photocurrent mapping, in conjunction with the spectroscopic approach, provides clues to local electronic structures and defect levels associated with oxygen vacancies. These observations provide insights into the spatial redistribution of oxygen vacancies in an electric field. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774381] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | American Institute of Physics | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Detection of electrically formed photosensitive area in Ca-doped BiFeO3 thin films | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.4774381 | - |
dc.author.google | Bharathi, KK | en_US |
dc.author.google | Lee, WM | en_US |
dc.author.google | Yang, CH | en_US |
dc.author.google | Jo, MH | en_US |
dc.author.google | Song, JH | en_US |
dc.author.google | Park, JW | en_US |
dc.author.google | Chu, K | en_US |
dc.author.google | Kim, SJ | en_US |
dc.author.google | Lim, JS | en_US |
dc.author.google | Sung, JH | en_US |
dc.relation.volume | 102 | en_US |
dc.relation.issue | 1 | en_US |
dc.contributor.id | 10176415 | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.102, no.1 | - |
dc.identifier.wosid | 000313646500094 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 1 | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 102 | - |
dc.contributor.affiliatedAuthor | Jo, MH | - |
dc.identifier.scopusid | 2-s2.0-84872318520 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 16 | - |
dc.description.scptc | 21 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | FERROELECTRICS | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | STRAIN | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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