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Cited 29 time in webofscience Cited 33 time in scopus
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dc.contributor.authorBharathi, KK-
dc.contributor.authorLee, WM-
dc.contributor.authorSung, JH-
dc.contributor.authorLim, JS-
dc.contributor.authorKim, SJ-
dc.contributor.authorChu, K-
dc.contributor.authorPark, JW-
dc.contributor.authorSong, JH-
dc.contributor.authorJo, MH-
dc.contributor.authorYang, CH-
dc.date.accessioned2015-06-25T01:29:30Z-
dc.date.available2015-06-25T01:29:30Z-
dc.date.created2014-03-19-
dc.date.issued2013-01-07-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000029616en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9769-
dc.description.abstractWe report on the visualization of n-p junctions formed by oxygen vacancy movement under the application of an electric field in a Ca-doped BiFeO3 thin film through spatially resolved scanning photocurrent mapping. The photocurrent mapping, in conjunction with the spectroscopic approach, provides clues to local electronic structures and defect levels associated with oxygen vacancies. These observations provide insights into the spatial redistribution of oxygen vacancies in an electric field. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774381]-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisher American Institute of Physics-
dc.relation.isPartOfApplied Physics Letters-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleDetection of electrically formed photosensitive area in Ca-doped BiFeO3 thin films-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.4774381-
dc.author.googleBharathi, KKen_US
dc.author.googleLee, WMen_US
dc.author.googleYang, CHen_US
dc.author.googleJo, MHen_US
dc.author.googleSong, JHen_US
dc.author.googlePark, JWen_US
dc.author.googleChu, Ken_US
dc.author.googleKim, SJen_US
dc.author.googleLim, JSen_US
dc.author.googleSung, JHen_US
dc.relation.volume102en_US
dc.relation.issue1en_US
dc.contributor.id10176415en_US
dc.relation.journalApplied Physics Lettersen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationApplied Physics Letters, v.102, no.1-
dc.identifier.wosid000313646500094-
dc.date.tcdate2019-01-01-
dc.citation.number1-
dc.citation.titleApplied Physics Letters-
dc.citation.volume102-
dc.contributor.affiliatedAuthorJo, MH-
dc.identifier.scopusid2-s2.0-84872318520-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc16-
dc.description.scptc21*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusOXIDE-
dc.subject.keywordPlusFERROELECTRICS-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusSTRAIN-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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조문호JO, MOON HO
Dept of Materials Science & Enginrg
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