Band gap engineering for graphene by using Na+ ions
SCIE
SCOPUS
- Title
- Band gap engineering for graphene by using Na+ ions
- Authors
- Sung, SJ; Lee, PR; Kim, JG; Ryu, MT; Park, HM; Chung, JW
- Date Issued
- 2014-08-25
- Publisher
- AMER INST PHYSICS
- Abstract
- Despite the noble electronic properties of graphene, its industrial application has been hindered mainly by the absence of a stable means of producing a band gap at the Dirac point (DP). We report a new route to open a band gap (E-g) at DP in a controlled way by depositing positively charged Na+ ions on single layer graphene formed on 6H-SiC(0001) surface. The doping of low energy Na+ ions is found to deplete the pi* band of graphene above the DP, and simultaneously shift the DP downward away from Fermi energy indicating the opening of E-g. The band gap increases with increasing Na+ coverage with a maximum E-g >= 0: 70 eV. Our core-level data, C 1s, Na 2p, and Si 2p, consistently suggest that Na+ ions do not intercalate through graphene, but produce a significant charge asymmetry among the carbon atoms of graphene to cause the opening of a band gap. We thus provide a reliable way of producing and tuning the band gap of graphene by using Na+ ions, which may play a vital role in utilizing graphene in future nano-electronic devices. (C) 2014 AIP Publishing LLC.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9791
- DOI
- 10.1063/1.4893993
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 105, no. 8, 2014-08-25
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.