Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory

Abstract

The dependence of reactive metal layer on resistive switching characteristics is investigated in a bi-layer structural Ta/HfOx filament type resistive random access memory (ReRAM). By increasing the oxygen absorption rate of the reactive metal layer, formation of an induced resistive switching region that led to significant changes in the resistive switching characteristics of the ReRAM was observed. Electrical and physical analyses showed that the induced TaOx-resistive switching region can result in self-compliance behavior, uniform resistive switching, and a gradual set process, which can be utilized for low power and analog operations. (C) 2014 AIP Publishing LLC.