DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, S | en_US |
dc.contributor.author | Woo, J | en_US |
dc.contributor.author | 황현상 | en_US |
dc.contributor.author | Hwang, H | en_US |
dc.contributor.author | Koo, Y | en_US |
dc.contributor.author | Song, J | en_US |
dc.contributor.author | Moon, K | en_US |
dc.contributor.author | Park, J | en_US |
dc.contributor.author | Cha, E | en_US |
dc.contributor.author | Lee, D | en_US |
dc.date.accessioned | 2015-06-25T01:31:11Z | - |
dc.date.available | 2015-06-25T01:31:11Z | - |
dc.date.issued | 2014-02 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.other | 2015-OAK-0000029036 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9796 | - |
dc.description.abstract | In this study, the effect of the oxygen profile and thickness of multiple-layers TiOx on tunnel barrier characteristics was investigated to achieve high non-linearity in low-resistance state current (I-LRS). To form the tunnel barrier in multiple-layer of TiOx, tunnel barrier engineering in terms of the thickness and oxygen profile was attempted using deposition and thermal oxidation times. It modified the defect distribution of the tunnel barrier for effective suppression of ILRS at off-state (1/2V(Read)). By inserting modified tunnel barrier in resistive random access memory, a high non-linear I-LRS was exhibited with a significantly lowered I-LRS for 1/2V(Read). (C) 2014 AIP Publishing LLC. | en_US |
dc.description.statementofresponsibility | open | en_US |
dc.format.extent | en_US | |
dc.publisher | American Institute of Physics Inc.. | en_US |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access Memory | en_US |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.4864471 | en_US |
dc.author.google | Lee, S | en_US |
dc.author.google | Woo, J | en_US |
dc.author.google | Hwang, H | en_US |
dc.author.google | Koo, Y | en_US |
dc.author.google | Song, J | en_US |
dc.author.google | Moon, K | en_US |
dc.author.google | Park, J | en_US |
dc.author.google | Cha, E | en_US |
dc.author.google | Lee, D | en_US |
dc.relation.volume | 104 | en_US |
dc.relation.issue | 5 | en_US |
dc.relation.startpage | 52108 | en_US |
dc.contributor.id | 10079928 | en_US |
dc.publisher.location | US | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.docType | Article | - |
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