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dc.contributor.authorSONG, JEONG HWAN-
dc.contributor.authorHWANG, HYUNSANG-
dc.contributor.authorSEOKJAE, LIM-
dc.contributor.authorYOO, JONGMYUNG-
dc.date.accessioned2019-04-08T08:35:48Z-
dc.date.available2019-04-08T08:35:48Z-
dc.date.created2019-03-13-
dc.date.issued2018-02-07-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/98365-
dc.publisher한국반도체산업협회, 한국반도체연구조합-
dc.relation.isPartOfThe 25th Korean Conference on Semiconductors / 제 25회 한국반도체학술대회-
dc.relation.isPartOf제 25회 한국반도체학술대회-
dc.titleImproved On-Current of Ag/NiO/TiO2/Pt Threshold Switching Device by Suppressing the Ag Incorporation-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 25th Korean Conference on Semiconductors / 제 25회 한국반도체학술대회-
dc.citation.conferenceDate2018-02-05-
dc.citation.conferencePlaceKO-
dc.citation.titleThe 25th Korean Conference on Semiconductors / 제 25회 한국반도체학술대회-
dc.contributor.affiliatedAuthorSONG, JEONG HWAN-
dc.contributor.affiliatedAuthorHWANG, HYUNSANG-
dc.contributor.affiliatedAuthorSEOKJAE, LIM-
dc.contributor.affiliatedAuthorYOO, JONGMYUNG-
dc.description.journalClass2-
dc.description.journalClass2-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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