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A Study on Bandgap Reference Circuit With Leakage-Based PTAT Generation SCIE SCOPUS

Title
A Study on Bandgap Reference Circuit With Leakage-Based PTAT Generation
Authors
Ji, YoungwooKim, ByungsubPark, Hong-JuneSim, Jae-Yoon
Date Issued
2018-11
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
This paper presents detailed analyses on leakage-based bandgap reference (BGR) circuit for ultralow-power applications. Design considerations for power supply rejection ratio and noise characteristics are provided with pole/zero analysis. Startup settling issue is also discussed with measurements. For verification, a test BGR circuit is implemented in a 0.18-mu m CMOS technology. The standard deviation of proportional-toabsolute-temperature (PTAT) voltages measured from 20 chips is 1.15% at 30 degrees C. The BGR also uses two PTAT voltages to reduce the resistance for complementary-to-absolute-temperature generation, hence alleviating the tradeoff limitation between power consumption and area cost. With an active area of 0.056 mm(2), the BGR consumes 19 nW at room temperature. Measurements from 20 chips show a standard deviation of 0.54% at 30 degrees C without any trimming, a temperature dependence of 143 ppm/degrees C and a line regulation of 2.4%/V.
URI
https://oasis.postech.ac.kr/handle/2014.oak/99232
DOI
10.1109/TVLSI.2018.2852802
ISSN
1063-8210
Article Type
Article
Citation
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, vol. 26, no. 11, page. 2310 - 2321, 2018-11
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김병섭KIM, BYUNGSUB
Dept of Electrical Enginrg
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