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Cited 7 time in webofscience Cited 7 time in scopus
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dc.contributor.authorLee, Eun Kwang-
dc.contributor.authorKim, Yonghee-
dc.contributor.authorBack, Jisu-
dc.contributor.authorLee, Eunsung-
dc.contributor.authorOh, Joon Hak-
dc.date.accessioned2019-07-04T09:10:55Z-
dc.date.available2019-07-04T09:10:55Z-
dc.date.created2018-08-06-
dc.date.issued2018-07-
dc.identifier.issn2050-7526-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/99273-
dc.description.abstractAir-stable and heating-free doping processes are highly desirable for realizing advanced flexible electronics on plastic substrates. A synthetic protocol for a high-performance n-type organic dopant using an organic cationic dye, Pyronin B, via a simple chemical reduction method with NaBH4 in various organic non-polar solvents is developed, in which the cationic dye Pyronin B is transformed into its leuco form. The reduced Pyronin B (rPyB, leuco form) spontaneously interacts with carbon nanomaterials, such as graphene and [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM), via hydride-mediated electron transfer doping, which is confirmed by electron spin resonance (ESR) analysis. After coating rPyB onto graphene, the non-polar solvents are removed by simple evacuation (similar to 1 x 10(-3) Torr) without an annealing step. The work function of graphene is reduced from 4.52 eV to 3.98 eV after doping. Multiple coatings of rPyB on graphene field-effect transistors (FETs) result in air stability for 90 days under ambient conditions. Selective n-type doping using a polydimethylsiloxane (PDMS) stamp and rPyB has also been performed on a large-area 16 x 16 graphene FET array. Our findings demonstrate a viable methodology for the cost-effective synthesis of an n-type dopant and its application in soft electronics.-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.relation.isPartOfJOURNAL OF MATERIALS CHEMISTRY C-
dc.titleReduced Pyronin B as a solution-processable and heating-free n-type dopant for soft electronics-
dc.typeArticle-
dc.identifier.doi10.1039/c8tc02094a-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS CHEMISTRY C, v.6, no.25, pp.6672 - 6679-
dc.identifier.wosid000436818100007-
dc.citation.endPage6679-
dc.citation.number25-
dc.citation.startPage6672-
dc.citation.titleJOURNAL OF MATERIALS CHEMISTRY C-
dc.citation.volume6-
dc.contributor.affiliatedAuthorLee, Eun Kwang-
dc.contributor.affiliatedAuthorLee, Eunsung-
dc.contributor.affiliatedAuthorOh, Joon Hak-
dc.identifier.scopusid2-s2.0-85049351256-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusAIR-STABLE ORGANOMETALLICS-
dc.subject.keywordPlusORGANIC SEMICONDUCTORS-
dc.subject.keywordPlusRAMAN-SPECTROSCOPY-
dc.subject.keywordPlusCARBON NANOTUBES-
dc.subject.keywordPlusDIRAC POINT-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusREDUCTION-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusSCATTERING-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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이은성LEE, EUNSUNG
Dept of Chemistry
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