DC Field | Value | Language |
---|---|---|
dc.contributor.author | Song, HJ | - |
dc.contributor.author | Yoon, SM | - |
dc.contributor.author | Shin, HJ | - |
dc.contributor.author | Lim, H | - |
dc.contributor.author | Park, C | - |
dc.contributor.author | Choi, HC | - |
dc.date.accessioned | 2015-06-25T01:41:18Z | - |
dc.date.available | 2015-06-25T01:41:18Z | - |
dc.date.created | 2009-09-07 | - |
dc.date.issued | 2009-09 | - |
dc.identifier.issn | 1359-7345 | - |
dc.identifier.other | 2015-OAK-0000018809 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9960 | - |
dc.description.abstract | Liquid GeCl4 precursors have been employed to grow into one dimensional Ge nanowires (NWs) via a vapor-liquid-solid (VLS) process, in which Si, supplied as a form of liquid SiCl4, plays a critical role for the successful formation of Ge NWs. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | CHEMICAL COMMUNICATIONS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Growth of germanium nanowires using liquid GeCl4 as a precursor: the critical role of Si impurities | - |
dc.type | Article | - |
dc.contributor.college | 화학과 | en_US |
dc.identifier.doi | 10.1039/B908361H | - |
dc.author.google | Song, HJ | en_US |
dc.author.google | Yoon, SM | en_US |
dc.author.google | Choi, HC | en_US |
dc.author.google | Park, C | en_US |
dc.author.google | Lim, H | en_US |
dc.author.google | Shin, HJ | en_US |
dc.relation.issue | 34 | en_US |
dc.relation.startpage | 5124 | en_US |
dc.relation.lastpage | 5126 | en_US |
dc.contributor.id | 10104219 | en_US |
dc.relation.journal | CHEMICAL COMMUNICATIONS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | CHEMICAL COMMUNICATIONS, no.34, pp.5124 - 5126 | - |
dc.identifier.wosid | 000269081900015 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 5126 | - |
dc.citation.number | 34 | - |
dc.citation.startPage | 5124 | - |
dc.citation.title | CHEMICAL COMMUNICATIONS | - |
dc.contributor.affiliatedAuthor | Choi, HC | - |
dc.identifier.scopusid | 2-s2.0-69249125706 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.description.scptc | 8 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | GE NANOWIRES | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
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