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YONG, KIJUNG(용기중) scopus

Department: Dept. of Chemical Engineering(화학공학과)

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Publication & Time Cited Count (For the Last 5 years)

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Date Issued : [2002 TO 2009] Journal Registered : scie Subject : ATOMIC LAYER DEPOSITION

Article

Growth and characterization of titanium silicate nanofilms for gate oxide applicationsSCIESCOPUS

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 8, no. 2, page. 577 - 583, 2008-02

Article

MOCVD and characterization of Hf-silicate thin films using HTB and TEMASSCIESCOPUS

JOURNAL OF NON-CRYSTALLINE SOLIDS, vol. 353, no. 11-12, page. 1172 - 1176, 2007-05-01

Article

Conformal growth and characterization of hafnium silicate thin film by MOCVD using HTB (hafnium tertra-tert-butoxide) and TDEAS (tetrakis-diethylamino silane)SCIESCOPUS

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol. 18, no. 4, page. 391 - 395, 2007-04

Article

Growth of zirconium silicate thin film by pulsed-MOCVD using ZTB and TDEASSCIESCOPUS

SURFACE REVIEW AND LETTERS, vol. 13, no. 5, page. 567 - 571, 2006-10

Article

MOCVD of tungsten nitride films using W(CO)(6) and NH3 for Cu diffusion barrierSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 151, no. 9, page. C594 - C597, 2004-08

Article

Interfacial properties of ultra thin ZrxSi1-xO2 with compositional gradation grown on Si(100) using Zr[N(C2H5)(2)](4) and Si(OC4H9)(4)SCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 22, no. 4, page. 2105 - 2109, 2004-07

Article

Characterization of zirconium silicate gate dielectrics deposited on si(100) using Zr(NEt2)(4) and Si((OBu)-Bu-n)(4)SCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 7, no. 5, page. F35 - F37, 2004-03

Article

Characterization of hafnium silicate thin films grown by MOCVD using a new combination of precursorsSCIESCOPUS

JOURNAL OF CRYSTAL GROWTH, vol. 263, no. 1-4, page. 442 - 446, 2004-03-01

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