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YONG, KIJUNG(용기중) scopus

Department: Dept. of Chemical Engineering(화학공학과)

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Date Issued : [2002 TO 2009] Journal Registered : scie Subject : GATE DIELECTRICS

Article

Atomic layer deposition of hafnium silicate film for high mobility pentacene thin film transistor applicationsSCIESCOPUS

JOURNAL OF MATERIALS CHEMISTRY, vol. 19, no. 37, page. 6857 - 6864, 2009-07

Article

Electrical characterization of Ti-silicate films grown by atomic layer chemical vapor depositionSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, vol. 46, no. 8A, page. 5259 - 5263, 2007-08

Article

MOCVD and characterization of Hf-silicate thin films using HTB and TEMASSCIESCOPUS

JOURNAL OF NON-CRYSTALLINE SOLIDS, vol. 353, no. 11-12, page. 1172 - 1176, 2007-05-01

Article

Growth of zirconium silicate thin film by pulsed-MOCVD using ZTB and TDEASSCIESCOPUS

SURFACE REVIEW AND LETTERS, vol. 13, no. 5, page. 567 - 571, 2006-10

Article

Physical and electrical characterizations of ultrathin Si-rich Hf-silicate film and Hf-silicate/SiO2 bilayer deposited by atomic layer chemical vapor depositionSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 100, no. 4, page. 44106-1 - 44106-5, 2006-08-15

Article

Highly conformal hafnium silicate film growth by atomic-layer chemical vapor deposition using a new combination of precursors: Hf(OC(CH3)(3))(4) and Si(N(CH3)(C2H5))(4)SCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, vol. 45, no. 6A, page. 5174 - 5177, 2006-06

Article

Photoelectron spectroscopic analysis of Hf-silicate/SiO2/Si stacks deposited by atomic layer chemical vapor depositionSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 24, no. 3, page. 1147 - 1150, 2006-05

Article

Atomic layer chemical vapor deposition and electrical characterization of hafnium silicate filmsSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 152, no. 4, page. F45 - F48, 2005-03

Article

Interfacial properties of ultra thin ZrxSi1-xO2 with compositional gradation grown on Si(100) using Zr[N(C2H5)(2)](4) and Si(OC4H9)(4)SCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 22, no. 4, page. 2105 - 2109, 2004-07

Article

Characterization of hafnium silicate thin films grown by MOCVD using a new combination of precursorsSCIESCOPUS

JOURNAL OF CRYSTAL GROWTH, vol. 263, no. 1-4, page. 442 - 446, 2004-03-01

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