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PARK, CHAN GYUNG(박찬경)
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Dept of Materials Science & Engineering(신소재공학과)
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Publication & Time Cited Count (For the Last 5 years)
Results 1-1 of 1 (Search time: 0.001 seconds).
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Date issued
2009
1
Type
Article
1
Subject
atomic layer deposition
1
conduction bands
1
dielectric materials
1
FILMS
1
hafnium compounds
1
interface states
1
leakage currents
1
NEXAFS
1
oxidation
1
OXIDES
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SCIE
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SCOPUS
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: FILMS
Date Issued
: 2009
Subject
: FILMS
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: NEXAFS
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: FILMS
Subject
: oxidation
Subject
: oxidation
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Article
HFO2/HFOXNY/HFO2 GATE DIELECTRIC FABRICATED BY IN SITU OXIDATION OF PLASMA-ENHANCED ATOMIC LAYER DEPOSITION HFN MIDDLE LAYER
SCIE
SCOPUS
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 8, page. G109 - G113, 2009-01
Maeng, WJ
;
Gu, GH
;
Park, CG
;
Lee, K
;
Lee, T
;
et al
1
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